315 citations
- Technische Universität DresdenDE14 papers
- Helmholtz-Zentrum Dresden-RossendorfDE3 papers
- Center for Advancing Electronics DresdenDE2 papers
- ETH ZurichCH2 papers
- Forschungszentrum JülichDE2 papers
- Georgia Institute of TechnologyUS2 papers
- Institute of NeuroinformaticsCH2 papers
- Madrid Institute for Advanced StudiesES2 papers
- Munich University of Applied SciencesDE2 papers
- RWTH Aachen UniversityDE2 papers
- State Key Laboratory of Electronic Thin Films and Integrated Devices2 papers
- Technion – Israel Institute of TechnologyIL2 papers
27 papers
Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study
Oliver Rehm, Lutz Baumgarten, Roberto Guido +6
Aluminum scandium nitride (AlScN) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semicond…
A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films
Suzanne Lancaster, Thomas Mikolajick, Stefan Slesazeck
A wakeup scheme for ferroelectric thin HfZrO films is presented, based on a gradual switching approach using multiple short pulses with a voltage amplitude roug…
Tunable Synaptic Working Memory with Volatile Memristive Devices
Saverio Ricci, David Kappel, Christian Tetzlaff +2
Different real-world cognitive tasks evolve on different relevant timescales. Processing these tasks requires memory mechanisms able to match their specific time constants. In part…
Decision Making by a Neuromorphic Network of Volatile Resistive Switching Memories
Saverio Ricci, David Kappel, Christian Tetzlaff +2
The necessity of having an electronic device working in relevant biological time scales with a small footprint boosted the research of a new class of emerging memories. Ag-based vo…
A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron
Paolo Gibertini, Luca Fehlings, Suzanne Lancaster +6
Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Ju…
Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing
Suzanne Lancaster, Quang T. Duong, Erika Covi +2
HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching c…