activity
20062023
most citedTop-down fabricated reconfigurable FET with two symmetric and high-current on-states

61 citations · 108 across the 6 of their papers we have counts for

collaborators

6 papers

physics.optics2023★ 1 cited

Surface Protection and Activation of Mid-IR Plasmonic Waveguides for Spectroscopy of Liquids

Mauro David, Ismael C. Doganlar, Daniele Nazzari +9

Liquid spectroscopy in the mid-infrared spectral range is a very powerful, yet premature technique for selective and sensitive molecule detection. Due to the lack of suitable conce…

cond-mat.mtrl-sci2021★ 1 cited

Epitaxial growth of crystalline CaF on silicene

Daniele Nazzari, Jakob A. Genser, Viktoria Ritter +5

Silicene is one of the most promising 2D materials for the realization of next-generation electronic devices, owing to its high carrier mobility and bandgap tunability through the…

physics.app-ph2020★ 61 cited

Top-down fabricated reconfigurable FET with two symmetric and high-current on-states

Maik Simon, Boshen Liang, Dustin Fischer +4

We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. T…

cond-mat.mtrl-sci2015

Development of nanowire devices with quantum functionalities

Michael Stuiber, Laurens Willems van Beveren, Brett Johnson +5

Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can be…

cond-mat.mes-hall2011★ 14 cited

Multiscale Modeling of Nanowire-based Schottky-Barrier Field-Effect Transistors for Sensor Applications

Daijiro Nozaki, Jens Kunstmann, Felix Zörgiebel +3

We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still ca…

cond-mat.mtrl-sci2006★ 31 cited

Silicon Nanowires, Catalytic Growth and Electrical Characterization

Walter M. Weber, Georg S. Duesberg, Andrew P. Graham +7

Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au cata…