315 citations
- Technische Universität DresdenDE14 papers
- Helmholtz-Zentrum Dresden-RossendorfDE3 papers
- Center for Advancing Electronics DresdenDE2 papers
- ETH ZurichCH2 papers
- Forschungszentrum JülichDE2 papers
- Georgia Institute of TechnologyUS2 papers
- Institute of NeuroinformaticsCH2 papers
- Madrid Institute for Advanced StudiesES2 papers
- Munich University of Applied SciencesDE2 papers
- RWTH Aachen UniversityDE2 papers
- State Key Laboratory of Electronic Thin Films and Integrated Devices2 papers
- Technion – Israel Institute of TechnologyIL2 papers
13 papers · 1 filter
Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study
Oliver Rehm, Lutz Baumgarten, Roberto Guido +6
Aluminum scandium nitride (AlScN) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semicond…
Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene
Suzanne Lancaster, Iciar Arnay, Ruben Guerrero +4
Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was…
Investigating charge trapping in ferroelectric thin films through transient measurements
Suzanne Lancaster, Patrick D Lomenzo, Moritz Engl +4
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique…
Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks
Suzanne Lancaster, Iciar Arnay, Ruben Guerrero +10
Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tun…
Piezoelectricity in hafnia
Sangita Dutta, Pratyush Buragohain, Sebastjan Glinsek +7
Because of its compatibility with semiconductor-based technologies, hafnia (HfO) is today's most promising ferroelectric material for applications in electronics. Yet, knowle…
Antiferroelectric negative capacitance from a structural phase transition in zirconia
Michael Hoffmann, Zheng Wang, Nujhat Tasneem +20
Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar o…