101 citations · 304 across the 8 of their papers we have counts for
9 papers
Access Rate-Dependent Endurance Behavior of Ferroelectric Hafnium Zirconium Oxide Capacitors
Roberto Guido, Julie Laguerre, Pramoda Vishnumurthy +6
Fluorite-structured ferroelectrics, such as hafnium zirconium oxide (), are among the most promising materials for developing the next generation of low-power…
iDART: Interferometric Dual-AC Resonance Tracking nano-electromechanical mapping
J. Bemis, F. Wunderwald, U. Schroeder +3
Piezoresponse force microscopy (PFM) has established itself as a very successful and reliable imaging and spectroscopic tool for measuring a wide variety of nanoscale electromechan…
Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study
Oliver Rehm, Lutz Baumgarten, Roberto Guido +6
Aluminum scandium nitride (AlScN) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semicond…
Analog Content-Addressable Memory from Complementary FeFETs
Xiwen Liu, Keshava Katti, Yunfei He +6
To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical…
Investigating charge trapping in ferroelectric thin films through transient measurements
Suzanne Lancaster, Patrick D Lomenzo, Moritz Engl +4
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique…
Piezoelectricity in hafnia
Sangita Dutta, Pratyush Buragohain, Sebastjan Glinsek +7
Because of its compatibility with semiconductor-based technologies, hafnia (HfO) is today's most promising ferroelectric material for applications in electronics. Yet, knowle…