48 citations · 111 across the 11 of their papers we have counts for
11 papers
Peak splitting and bias fields in ferroelectric hafnia mediated by interface charge effects
Moritz Engl, Wassim Hamouda, Ines Häusler +5
The pristine state of hafnium based ferroelectric devices exhibits various unwanted properties, such as imprint and peak splitting, which diminish with bipolar cycling. The incorpo…
Weight update in ferroelectric memristors with identical and non-identical pulses
Suzanne Lancaster, Maximilien Remillieux, Moritz Engl +5
Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation…
A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films
Suzanne Lancaster, Thomas Mikolajick, Stefan Slesazeck
A wakeup scheme for ferroelectric thin HfZrO films is presented, based on a gradual switching approach using multiple short pulses with a voltage amplitude roug…
A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron
Paolo Gibertini, Luca Fehlings, Suzanne Lancaster +6
Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Ju…
Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing
Suzanne Lancaster, Quang T. Duong, Erika Covi +2
HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching c…
Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene
Suzanne Lancaster, Iciar Arnay, Ruben Guerrero +4
Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was…
Investigating charge trapping in ferroelectric thin films through transient measurements
Suzanne Lancaster, Patrick D Lomenzo, Moritz Engl +4
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique…
A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices
Shyam Narayanan, Erika Covi, Viktor Havel +7
Novel non-volatile memory devices based on ferroelectric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical swi…
Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks
Suzanne Lancaster, Iciar Arnay, Ruben Guerrero +10
Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tun…
Ferroelectric Tunneling Junctions for Edge Computing
Erika Covi, Quang T. Duong, Suzanne Lancaster +10
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium…
Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy
Suzanne Lancaster, Heiko Groiss, Tobias Zederbauer +5
The addition of boron to GaAs nanowires grown by self-catalyzed molecular beam epitaxy was found to have a strong effect on the nanowire morphology, with axial growth greatly reduc…