activity
20182025
most citedInvestigating charge trapping in ferroelectric thin films through transient measurements

48 citations · 111 across the 11 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

6 papers · 1 filter

cond-mat.mtrl-sci2025

Peak splitting and bias fields in ferroelectric hafnia mediated by interface charge effects

Moritz Engl, Wassim Hamouda, Ines Häusler +5

The pristine state of hafnium based ferroelectric devices exhibits various unwanted properties, such as imprint and peak splitting, which diminish with bipolar cycling. The incorpo…

cond-mat.mtrl-sci2024

Weight update in ferroelectric memristors with identical and non-identical pulses

Suzanne Lancaster, Maximilien Remillieux, Moritz Engl +5

Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation…

cond-mat.mtrl-sci2022

Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene

Suzanne Lancaster, Iciar Arnay, Ruben Guerrero +4

Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was…

cond-mat.mtrl-sci2022★ 48 cited

Investigating charge trapping in ferroelectric thin films through transient measurements

Suzanne Lancaster, Patrick D Lomenzo, Moritz Engl +4

A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique…

cond-mat.mtrl-sci2021★ 13 cited

Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks

Suzanne Lancaster, Iciar Arnay, Ruben Guerrero +10

Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tun…

cond-mat.mtrl-sci2018★ 1 cited

Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

Suzanne Lancaster, Heiko Groiss, Tobias Zederbauer +5

The addition of boron to GaAs nanowires grown by self-catalyzed molecular beam epitaxy was found to have a strong effect on the nanowire morphology, with axial growth greatly reduc…