315 citations
- Technische Universität DresdenDE14 papers
- Helmholtz-Zentrum Dresden-RossendorfDE3 papers
- Center for Advancing Electronics DresdenDE2 papers
- ETH ZurichCH2 papers
- Forschungszentrum JülichDE2 papers
- Georgia Institute of TechnologyUS2 papers
- Institute of NeuroinformaticsCH2 papers
- Madrid Institute for Advanced StudiesES2 papers
- Munich University of Applied SciencesDE2 papers
- RWTH Aachen UniversityDE2 papers
- State Key Laboratory of Electronic Thin Films and Integrated Devices2 papers
- Technion – Israel Institute of TechnologyIL2 papers
6 papers · 1 filter
Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks
Suzanne Lancaster, Iciar Arnay, Ruben Guerrero +10
Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tun…
Piezoelectricity in hafnia
Sangita Dutta, Pratyush Buragohain, Sebastjan Glinsek +7
Because of its compatibility with semiconductor-based technologies, hafnia (HfO) is today's most promising ferroelectric material for applications in electronics. Yet, knowle…
Ferroelectric Tunneling Junctions for Edge Computing
Erika Covi, Quang T. Duong, Suzanne Lancaster +10
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium…
Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing
Benjamin Max, Michael Hoffmann, Halid Mulaosmanovic +2
Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorph…
Antiferroelectric negative capacitance from a structural phase transition in zirconia
Michael Hoffmann, Zheng Wang, Nujhat Tasneem +20
Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar o…
On the Performance of Dual-Gate Reconfigurable Nanowire Transistors
Bin Sun, Benjamin Richstein, Patrick Liebisch +5
We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this…