Bulk and surface electronic states in the dosed semimetallic HfTe${}_2$

Abstract

The dosing of layered materials with alkali metals has become a commonly used strategy in ARPES experiments. However, precisely what occurs under such conditions, both structurally and electronically, has remained a matter of debate. Here we perform a systematic study of 1T-HfTe${}_2$, a prototypical semimetal of the transition metal dichalcogenide family. By utilizing photon energy-dependent angle-resolved photoemission spectroscopy (ARPES), we have investigated the electronic structure of this material as a function of Potassium (K) deposition. From the k${}_z$ maps, we observe the appearance of 2D dispersive bands after electron dosing, with an increasing sharpness of the bands, consistent with the wavefunction confinement at the topmost layer. In our highest-dosing cases, a monolayer-like electronic structure emerges, presumably as a result of intercalation of the alkali metal. Here, by bringing the topmost valence band below $E_F$, we can directly measure a band overlap of $\sim$ 0.2 eV. However, 3D bulk-like states still contribute to the spectra even after considerable dosing. Our work provides a reference point for the increasingly popular studies of the alkali metal dosing of semimetals using ARPES.

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Cited by in corpus (3)

• Observation of possible excitonic charge density waves and metal-insulator transitions in atomically thin semimetals
• Fermiology and electron-phonon coupling in the 2H and 3R polytypes of NbS${}_2$
• Shubnikov-de Haas oscillations and planar Hall effect in HfTe2