First-principles study of mechanical and electronic properties of bent monolayer transition metal dichalcogenides

Abstract

The mechanical and electronic properties of transition metal dichalcogenide (TMD) monolayers corresponding to transition groups IV, VI, and X are explored under mechanical bending from first principles calculations using the strongly constrained and appropriately normed (SCAN) meta-GGA (MGGA). SCAN provides an accurate description of the phase stability of the TMD monolayers. Our calculated lattice parameters and other structural parameters agree well with experiment. We find that bending stiffness (or flexural rigidity) increases as the transition metal group goes from IV to X to VI, with the exception of PdTe${}_2$. Variation in mechanical properties (local strain, physical thickness) and electronic properties (local charge density, band structure) with bending curvature is discussed. The local strain profile of these TMD monolayers under mechanical bending is highly non-uniform. The mechanical bending tunes not only the thickness of the TMD monolayers but also the local charge distribution as well as the band structures, adding more functionalization options to these materials.

References in corpus (2)

• Defect Energy Levels in Density Functional Calculations: Alignment and Band Gap Problem
• Molecular Beam Epitaxy of thin HfTe2 semimetal films

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