Electrical control of uniformity in quantum dot devices

Abstract

Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape using hysteretic shifts of the gate voltage characteristics. We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts that then remain stable at least for hours. Applying our method, we homogenize the pinch-off voltages of the plunger gates in a linear array for four quantum dots reducing the spread in pinch-off voltage by one order of magnitude. This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays.

References in corpus (4)

• An addressable quantum dot qubit with fault-tolerant control fidelity
• Scalable gate architecture for densely packed semiconductor spin qubits
• Electrical control of uniformity in quantum dot devices
• Wafer-scale low-disorder 2DEG in ${}^{28}$Si/SiGe without an epitaxial Si cap

Cited by in corpus (10)

• Low disorder and high valley splitting in silicon
• Electrical control of uniformity in quantum dot devices
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• SpinQ: Compilation strategies for scalable spin-qubit architectures
• Lattice deformation at the sub-micron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices
• Decoherence induced by a sparse bath of two-level fluctuators: peculiar features of $1/f$ noise in high-quality qubits
• Single-electron occupation in quantum dot arrays at selectable plunger gate voltage
• Extended Hubbard model describing small multi-dot arrays in bilayer graphene
• Control of threshold voltages in Si/SiGe quantum devices via optical illumination