Decoherence induced by a sparse bath of two-level fluctuators: peculiar features of $1/f$ noise in high-quality qubits

Abstract

Progress in fabrication of semiconductor and superconductor qubits has greatly diminished the number of decohering defects, thus decreasing the devastating low-frequency $1/f$ noise and extending the qubits' coherence times (dephasing time $T_2^{\ast }$ and the echo decay time $T_2$). However, large qubit-to-qubit variation of the coherence properties remains a problem, making it difficult to produce a large-scale register where all qubits have a uniformly high quality. In this work we show that large variability is a characteristic feature of a qubit dephased by a sparse bath made of many ($n\gg 1$) decohering defects, coupled to the qubit with similar strength. We model the defects as two-level fluctuators (TLFs) whose transition rates $\gamma$ are sampled from a log-uniform distribution over an interval $[{\gamma }_m,{\gamma }_M]$, which is a standard model for $1/f$ noise. We investigate decoherence by such a bath in the limit of high-quality qubit, i.e.\ when the TLF density $d$ is small (the limit of sparse bath, with $d=n/w\ll 1$, where $n$ is the number of TLFs and $w=\ln [{\gamma }_M/{\gamma }_m]$ is the log-width of the distribution). We show that different realizations of the bath produce very similar noise power spectra $S(f)\sim 1/f$, but lead to drastically different coherence times $T_2^{\ast }$ and $T_2$. Thus, the spectral density $S(f)$ does not determine coherence of a qubit coupled to a sparse TLF bath, as opposed to a dense bath; instead, decoherence is controlled by only a few exceptional fluctuators, determined by their value of $\gamma$. We show that removing only two of these TLFs greatly increases $T_2$ and $T_2^{\ast }$ times. Our findings help theoretical understanding and further improvements in the coherence properties of semiconductor and superconductor qubits, battling the $1/f$ noise in these platforms.

20 pages, 12 figures

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Cited by in corpus (4)

• In-situ scanning gate imaging of individual two-level material defects in live superconducting quantum circuits
• Erasure conversion for singlet-triplet spin qubits enables high-performance shuttling-based quantum error correction
• Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot
• Decoherence and fidelity enhancement during shuttling of entangled spin qubits