Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure

Abstract

Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by $1/f$ charge noise. We investigate theoretically fluctuations of ground state energy of an electron in gated quantum dot in realistic Si/SiGe structure. We assume that the charge noise is caused by motion of charges trapped at the semiconductor-oxide interface. We consider a realistic range of trapped charge densities, $\rho \sim 10^{10}$ cm${}^{-2}$, and typical lenghtscales of isotropically distributed displacements of these charges, $\delta r\le 1$ nm, and identify pairs $(\rho ,\delta r)$ for which the amplitude and shape of the noise spectrum is in good agreement with spectra reconstructed in recent experiments on similar structures.

arXiv comment5 pages, 5 figures, added repository: https://doi.org/10.24435/materialscloud:mx-0w

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• Decoherence of electron spin qubit during transfer between two semiconductor quantum dots at low magnetic fields
• Modelling of planar germanium hole qubits in electric and magnetic fields
• Erasure conversion for singlet-triplet spin qubits enables high-performance shuttling-based quantum error correction
• Ab initio modelling of quantum dot qubits: Coupling, gate dynamics and robustness versus charge noise
• Limitations on the maximal level of entanglement of two singlet-triplet qubits in GaAs quantum dots