Spin decoherence in a two-qubit CPHASE gate: the critical role of tunneling noise
arXiv:1803.01062 · doi:10.1038/s41534-018-0112-0
Abstract
Rapid progress in semiconductor spin qubits has enabled experimental demonstrations of a two-qubit logic gate. Understanding spin decoherence in a two-qubit logic gate is necessary for optimal qubit operation. We study spin decoherence due to charge noise for two electrons in a double quantum dot used for a two-qubit controlled-phase gate. In contrast to the usual belief, spin decoherence can be dominated by the tunneling noise from charge noise instead of the detuning noise. Tunneling noise can dominate because the effect of tunneling noise on the spin qubit is first order in the charge admixture; while the effect of the detuning noise is only second order. The different orders of contributions result in different detuning dependence of the decoherence, which provides a way to identify the noise source. We find that decoherence in a recent two-qubit experiment was dominated by the tunneling noise from charge noise. The results illustrate the importance of considering tunneling noise to design optimal operation of spin qubits.
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