Dephasing of Si singlet-triplet qubits due to charge and spin defects

Abstract

We study the effect of charge and spin noise on singlet-triplet qubits in Si quantum dots. We set up a theoretical framework aimed at enabling experiment to efficiently identify the most deleterious defects, and complement it with the knowledge of defects gained in decades of industrial and academic work. We relate the dephasing rates ${\Gamma }_{\varphi }$ due to various classes of defects to experimentally measurable parameters such as charge dipole moment, spin dipole moment and fluctuator switching times. We find that charge fluctuators are more efficient in causing dephasing than spin fluctuators.

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• The asymmetric resonant exchange qubit under the influence of electrical noise
• Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
• Quantum Computing with Acceptor Spins in Silicon
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• Decoherence of an exchange qubit by hyperfine interaction
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• Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure
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• Greedy versus Map-based Optimized Adaptive Algorithms for random-telegraph-noise mitigation by spectator qubits
• Interacting Two-Level Systems as a Source of 1/f Charge Noise in Quantum Dot Qubits
• Dynamical second-order noise sweetspots in resonantly driven spin qubits
• Optimisation of electrically-driven multi-donor quantum dot qubits
• Toward Axion Signal Extraction in Semiconductor Spin Qubits Via Spectral Engineering
• On the validity of microscopic calculations of double-quantum-dot spin qubits based on Fock-Darwin states