Interacting Two-Level Systems as a Source of 1/f Charge Noise in Quantum Dot Qubits

Abstract

Charge noise in semiconducting quantum dots has been observed to have a 1/f spectrum. We propose a model in which a pair of quantum dots are coupled to a 2D bath of fluctuating two level systems (TLS) that have electric dipole moments and that interact with each other, i.e., with the other fluctuators. These interactions are primarily via the elastic strain field. We use a 2D nearest-neighbor Ising spin glass to represent these elastic interactions and to simulate the dynamics of the bath of electric dipole fluctuators in the presence of a ground plane representing metal gates above the oxide layer containing the fluctuators. The interactions between the TLS cause the energy splitting of individual fluctuators to change with time. We calculate the resulting fluctuations in the electric potential at the two quantum dots that lie below the oxide layer. We find that 1/f electric potential noise spectra at the quantum dots and cross correlation in the noise between the two quantum dots are in qualitative agreement with experiment. Our simulations find that the cross correlations decrease exponentially with increasing quantum dot separation.

14 pages, 11 figures

References in corpus (11)

• Surface codes: Towards practical large-scale quantum computation
• Noise-correlation spectrum for a pair of spin qubits in silicon
• Absence of Conventional Spin-Glass Transition in the Ising Dipolar System LiHo_xY_{1-x}F_4
• Spatial noise correlations beyond nearest-neighbor in ${}^{28}$Si/SiGe spin qubits
• Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
• Saturation of Two Level Systems and Charge Noise in Josephson Junction Qubits
• Microscopic models for charge-noise-induced dephasing of solid-state qubits
• Specific Heat of the Dilute Ising Magnet LiHo${}_x$Y${}_{1-x}$F${}_4$
• Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure
• Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot
• Effects of Temperature Fluctuations on Charge Noise in Quantum Dot Qubits

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• Ab initio modelling of quantum dot qubits: Coupling, gate dynamics and robustness versus charge noise