Indications of a soft cutoff frequency in the charge noise of a Si/SiGe quantum dot spin qubit

Abstract

Characterizing charge noise is of prime importance to the semiconductor spin qubit community. We analyze the echo amplitude data from a recent experiment [Yoneda et al., Nat. Nanotechnol. 13, 102 (2018)] and note that the data shows small but consistent deviations from a $1/f^{\alpha }$ noise power spectrum at the higher frequencies in the measured range. We report the results of using a physical noise model based on two-level fluctuators to fit the data and find that it can mostly explain the deviations. While our results are suggestive rather than conclusive, they provide what may be an early indication of a high-frequency cutoff in the charge noise. The location of this cutoff, where the power spectral density of the noise gradually rolls off from $1/f$ to $1/f^2$, crucial knowledge for designing precise qubit control pulses, is given by our fit of the data to be around 200 kHz.

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• Low-frequency charge noise in Si/SiGe quantum dots
• Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations
• Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
• Analytically parameterized solutions for robust quantum control using smooth pulses
• Microscopic bath effects on noise spectra in semiconductor quantum dot qubits
• Robust implementation of quantum gates despite always-on exchange coupling in silicon double quantum dots
• Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot
• Interacting Two-Level Systems as a Source of 1/f Charge Noise in Quantum Dot Qubits
• The origins of noise in the Zeeman splitting of spin qubits in natural-silicon devices
• A generalized model of the noise spectrum of a two-level fluctuator in the presence of an electron subbath