A generalized model of the noise spectrum of a two-level fluctuator in the presence of an electron subbath
arXiv:2305.14348 · doi:10.1103/PhysRevB.109.075304
Abstract
The work of Ahn derives the noise power spectrum of a two-level fluctuator (TLF) in the case that it interacts only with a subregion of a full electron bath and thus is subject to a fluctuating temperature. However, Eq.~(1), which gives the variance of the subbath temperature in terms of the heat capacity, in that work carries the implicit assumption that the heat capacity of this subbath may be taken to be a constant, which is a good approximation at higher temperatures, but breaks down at lower temperatures. We thus extend this work to the case in which the fact that the electronic heat capacity of a two-dimensional electron gas (2DEG) , rather than constant in temperature, is fully taken into account. We show that, at low temperatures, the resulting power spectrum of the noise , in contrast to as found previously, where and are constants. We also compare the numerical results that one would obtain from the two models and find that our results for can differ from those of Ahn by several orders of magnitude at low temperatures.
9 pages, 7 figures. Corrected mistakes in some formulas (no change to the overall message of the paper). Added three new figures (Figs. 1, 6, and 7), the last of which compares our results to experimental data. Extended the range of frequencies covered in Figs. 2 and 3. Now published in Phys. Rev. B; this is the published version
References in corpus (11)
- An addressable quantum dot qubit with fault-tolerant control fidelity
- Computing with spin qubits at the surface code error threshold
- Fast universal quantum control above the fault-tolerance threshold in silicon
- Two-qubit silicon quantum processor with operation fidelity exceeding 99%
- Low-frequency charge noise in Si/SiGe quantum dots
- Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations
- Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing
- Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon
- Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
- Environmental noise effects on entanglement fidelity of exchange-coupled semiconductor spin qubits
- Microscopic bath effects on noise spectra in semiconductor quantum dot qubits