Robust implementation of quantum gates despite always-on exchange coupling in silicon double quantum dots

Abstract

Addressability of spin qubits in a silicon double quantum dot setup in the (1,1) charge configuration relies on having a large difference between the Zeeman splittings of the electrons. When the difference is not sufficiently large, the rotating wave approximation becomes inaccurate. We consider a device working in this regime, with always-on exchange coupling, and describe how a CZ gate and arbitrary one-qubit gates which are robust against charge noise can be implemented by smoothly pulsing the microwave source, while eliminating the crosstalk. We find that the most significant deviations from the rotating wave approximation, which are analogous to the Bloch-Siegert shift in a two-level system, can be compensated using local virtual gates.

References in corpus (32)

• NMR Techniques for Quantum Control and Computation
• Randomized Benchmarking of Quantum Gates
• An addressable quantum dot qubit with fault-tolerant control fidelity
• A Two Qubit Logic Gate in Silicon
• A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
• A programmable two-qubit quantum processor in silicon
• Efficient Z-Gates for Quantum Computing
• Quantum CNOT Gate for Spins in Silicon
• Fidelity benchmarks for two-qubit gates in silicon
• Two-qubit Gate of Combined Single Spin Rotation and Inter-dot Spin Exchange in a Double Quantum Dot
• Silicon qubit fidelities approaching incoherent noise limits via pulse engineering
• Low-frequency charge noise in Si/SiGe quantum dots
• Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device
• Assessment of a silicon quantum dot spin qubit environment via noise spectroscopy
• High-fidelity quantum gates in Si/SiGe double quantum dots
• Dephasing of Si spin qubits due to charge noise
• Probing low noise at the MOS interface with a spin-orbit qubit
• Efficient C-Phase gate for single-spin qubits in quantum dots
• Generic Hubbard model description of semiconductor quantum dot spin qubits
• Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction
• Entanglement of superconducting qubits via microwave fields: classical and quantum regimes
• Calibration of the cross-resonance two-qubit gate between directly-coupled transmons
• Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability
• Electron g-factor of valley states in realistic silicon quantum dots
• Hubbard model description of silicon spin qubits: charge stability diagram and tunnel coupling in Si double quantum dots
• Robust quantum control using smooth pulses and topological winding
• Fast high-fidelity entangling gates for spin qubits in Si double quantum dots
• Analytically parameterized solutions for robust quantum control using smooth pulses
• Impact of g-factors and valleys on spin qubits in a silicon double quantum dot
• Spin decoherence in a two-qubit CPHASE gate: the critical role of tunneling noise
• Pulse sequence designed for robust C-phase gates in SiMOS and Si/SiGe double quantum dots
• Indications of a soft cutoff frequency in the charge noise of a Si/SiGe quantum dot spin qubit

Cited by in corpus (8)

• Geometrical Formalism for Dynamically Corrected Gates in Multiqubit Systems
• Robust quantum gates using smooth pulses and physics-informed neural networks
• Two-qubit CZ gates robust against charge noise in silicon while compensating for crosstalk using neural network
• Single-tone pulse sequences and robust two-tone shaped pulses for three silicon spin qubits with always-on exchange
• Classical-Quantum Noise Mitigation for NISQ Hardware
• Analysis and mitigation of residual exchange coupling in linear spin qubit arrays
• Neural-network-designed three-qubit gates robust against charge noise and crosstalk in silicon
• Nonadiabatic quantum control of quantum dot arrays with fixed exchange using Cartan decomposition