Impact of g-factors and valleys on spin qubits in a silicon double quantum dot

Abstract

We define single electron spin qubits in a silicon MOS double quantum dot system. By mapping the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an inter-valley spin-orbit coupling. We fit the data from which we extract an inter-valley coupling strength of 43 MHz. In addition, we observe a narrow resonance near the primary qubit resonance when we operate the device in the (1,1) charge configuration. The experimental data is consistent with a simulation involving two weakly exchanged-coupled spins with a g-factor difference of 1 MHz, of the same order as the Rabi frequency. We conclude that the narrow resonance is the result of driven transitions between the T- and T+ triplet states, using an ESR signal of frequency located halfway between the resonance frequencies of the two individual spins. The findings presented here offer an alternative method of implementing two-qubit gates, of relevance to the operation of larger scale spin qubit systems.

References in corpus (7)

• Single-shot read-out of an individual electron spin in a quantum dot
• Driven coherent oscillations of a single electron spin in a quantum dot
• An addressable quantum dot qubit with fault-tolerant control fidelity
• Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
• Spin-orbit coupling and operation of multi-valley spin qubits
• Nanoscale broadband transmission lines for spin qubit control
• Control of valley dynamics in silicon quantum dots in the presence of an interface step

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• Looped Pipelines Enabling Effective 3D Qubit Lattices in a Strictly 2D Device
• CMOS Quantum Computing: Toward A Quantum Computer System-on-Chip
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• Evanescent-wave Johnson Noise in small devices
• Valleytronic full configuration-interaction approach: An application to the excitation spectra of Si double-dot qubits
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• Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling