373 citations · 1.2k across the 17 of their papers we have counts for
16 papers
High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots
Constance Lainé, Giovanni A. Oakes, Virginia Ciriano-Tejel +9
Metal-oxide-semiconductor (MOS) technology is a promising platform for developing quantum computers based on spin qubits. Scaling this approach will benefit from compact and sensit…
Radiofrequency cascade readout of coupled spin qubits
Jacob F. Chittock-Wood, Ross C. C. Leon, Michael A. Fogarty +12
Silicon spin qubits based on metal-oxide-semiconductor (MOS) technology are compatible with semiconductor manufacturing and offer a route to scalable quantum processing. However, s…
Pipeline quantum processor architecture for silicon spin qubits
S. M. Patomäki, M. F. Gonzalez-Zalba, M. A. Fogarty +3
Noisy intermediate-scale quantum (NISQ) devices seek to achieve quantum advantage over classical systems without the use of full quantum error correction. We propose a NISQ process…
An elongated quantum dot as a distributed charge sensor
S. M. Patomäki, J. Williams, F. Berritta +10
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongate…
Silicon edge-dot architecture for quantum computing with global control and integrated trimming
Michael A. Fogarty
A scalable quantum information processing architecture based on silicon metal-oxide-semiconductor technology is presented, combining quantum hardware elements from planar and 3D si…
Fast high-fidelity single-shot readout of spins in silicon using a single-electron box
G. A. Oakes, V. N. Ciriano-Tejel, D. Wise +18
Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary…
Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
Jingyu Duan, Janne S. Lehtinen, Michael A. Fogarty +8
We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The a…
Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
V. N. Ciriano-Tejel, M. A. Fogarty, S. Schaal +8
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the m…
Remote capacitive sensing in two-dimension quantum-dot arrays
Jingyu Duan, Michael A. Fogarty, James Williams +3
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI…
A Silicon Surface Code Architecture Resilient Against Leakage Errors
Zhenyu Cai, Michael A. Fogarty, Simon Schaal +3
Spin qubits in silicon quantum dots are one of the most promising building blocks for large scale quantum computers thanks to their high qubit density and compatibility with the ex…
Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction
Tuomo Tanttu, Bas Hensen, Kok Wai Chan +9
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures in…
Fidelity benchmarks for two-qubit gates in silicon
W. Huang, C. H. Yang, K. W. Chan +10
Universal quantum computation will require qubit technology based on a scalable platform, together with quantum error correction protocols that place strict limits on the maximum i…
Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout
M. A. Fogarty, K. W. Chan, B. Hensen +10
Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long co…
Impact of g-factors and valleys on spin qubits in a silicon double quantum dot
J. C. C. Hwang, C. H. Yang, M. Veldhorst +6
We define single electron spin qubits in a silicon MOS double quantum dot system. By mapping the qubit resonance frequency as a function of gate-induced electric field, the spectru…
A logical qubit in a linear array of semiconductor quantum dots
Cody Jones, Michael A. Fogarty, Andrea Morello +3
We design and analyze a logical qubit composed of a linear array of electron spins in semiconductor quantum dots. To avoid the difficulty of fully controlling a two-dimensional arr…
Non-exponential Fidelity Decay in Randomized Benchmarking with Low-Frequency Noise
M. A. Fogarty, M. Veldhorst, R. Harper +4
We show that non-exponential fidelity decays in randomized benchmarking experiments on quantum dot qubits are consistent with numerical simulations that incorporate low-frequency n…