39 citations · 61 across the 2 of their papers we have counts for
8 papers
Fast Bayesian tomography of a two-qubit gate set in silicon
T. J. Evans, W. Huang, J. Yoneda +9
Benchmarking and characterising quantum states and logic gates is essential in the development of devices for quantum computing. We introduce a Bayesian approach to self-consistent…
Coherent control of electron spin qubits in silicon using a global field
E. Vahapoglu, J. P. Slack-Smith, R. C. C. Leon +13
Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors…
Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
S. D. Liles, R. Li, C. H. Yang +4
The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent man…
Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout
M. A. Fogarty, K. W. Chan, B. Hensen +10
Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long co…
Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability
Rifat Ferdous, Kok W. Chan, Menno Veldhorst +6
We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. Fir…
Valley splitting of single-electron Si MOS quantum dots
John King Gamble, Patrick Harvey-Collard, N. Tobias Jacobson +10
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy state…