975 citations · 3k across the 18 of their papers we have counts for
18 papers
Fast Bayesian tomography of a two-qubit gate set in silicon
T. J. Evans, W. Huang, J. Yoneda +9
Benchmarking and characterising quantum states and logic gates is essential in the development of devices for quantum computing. We introduce a Bayesian approach to self-consistent…
Coherent control of electron spin qubits in silicon using a global field
E. Vahapoglu, J. P. Slack-Smith, R. C. C. Leon +13
Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors…
Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
S. D. Liles, R. Li, C. H. Yang +4
The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent man…
Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout
M. A. Fogarty, K. W. Chan, B. Hensen +10
Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long co…
Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability
Rifat Ferdous, Kok W. Chan, Menno Veldhorst +6
We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. Fir…
Valley splitting of single-electron Si MOS quantum dots
John King Gamble, Patrick Harvey-Collard, N. Tobias Jacobson +10
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy state…
Silicon CMOS architecture for a spin-based quantum computer
M. Veldhorst, H. G. J. Eenink, C. H. Yang +1
Recent advances in quantum error correction (QEC) codes for fault-tolerant quantum computing \cite{Terhal2015} and physical realizations of high-fidelity qubits in a broad range of…
Impact of g-factors and valleys on spin qubits in a silicon double quantum dot
J. C. C. Hwang, C. H. Yang, M. Veldhorst +6
We define single electron spin qubits in a silicon MOS double quantum dot system. By mapping the qubit resonance frequency as a function of gate-induced electric field, the spectru…
Spin-orbit coupling and operation of multi-valley spin qubits
M. Veldhorst, R. Ruskov, C. H. Yang +7
Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched silicon. Using pulsed electron spin reso…
Non-exponential Fidelity Decay in Randomized Benchmarking with Low-Frequency Noise
M. A. Fogarty, M. Veldhorst, R. Harper +4
We show that non-exponential fidelity decays in randomized benchmarking experiments on quantum dot qubits are consistent with numerical simulations that incorporate low-frequency n…
A Two Qubit Logic Gate in Silicon
M. Veldhorst, C. H. Yang, J. C. C. Hwang +9
Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates \cite{DiVincenzo…
An addressable quantum dot qubit with fault-tolerant control fidelity
M. Veldhorst, J. C. C. Hwang, C. H. Yang +8
Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon,…
Charge State Hysteresis in Semiconductor Quantum Dots
C. H. Yang, A. Rossi, N. S. Lai +3
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge c…
Coulomb interaction and valley-orbit coupling in Si quantum dots
Luyao Jiang, C. H. Yang, Zhaodi Pan +3
The valley-orbit coupling in a few-electron Si quantum dot is expected to be a function of its occupation number N. We study the spectrum of multivalley Si quantum dots for 2 <= N…
Dynamically controlled charge sensing of a few-electron silicon quantum dot
C. H. Yang, W. H. Lim, F. A. Zwanenburg +1
We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using…
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves +9
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain curren…
Electron spin blockade and singlet-triplet transition in a silicon single electron transistor
Binhui Hu, C. H. Yang
We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quant…
Characterization of one-dimensional quantum channels in InAs/AlSb
C. H. Yang, M. J. Yang, K. A. Cheng +1
We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofab…