An addressable quantum dot qubit with fault-tolerant control fidelity

Abstract

Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges in coupling such qubits and addressing them individually. Conversely, lithographically defined quantum dots have an exchange coupling that can be precisely engineered, but strong coupling to noise has severely limited their dephasing times and control fidelities. Here we combine the best aspects of both spin qubit schemes and demonstrate a gate-addressable quantum dot qubit in isotopically engineered silicon with a control fidelity of 99.6%, obtained via Clifford based randomized benchmarking and consistent with that required for fault-tolerant quantum computing. This qubit has orders of magnitude improved coherence times compared with other quantum dot qubits, with T_2* = 120 mus and T_2 = 28 ms. By gate-voltage tuning of the electron g*-factor, we can Stark shift the electron spin resonance (ESR) frequency by more than 3000 times the 2.4 kHz ESR linewidth, providing a direct path to large-scale arrays of addressable high-fidelity qubits that are compatible with existing manufacturing technologies.

References in corpus (8)

• Surface codes: Towards practical large-scale quantum computation
• Single-shot read-out of an individual electron spin in a quantum dot
• Driven coherent oscillations of a single electron spin in a quantum dot
• Randomized Benchmarking of Quantum Gates
• Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
• Enhancing the Coherence of a Spin Qubit by Operating it as a Feedback Loop That Controls its Nuclear Spin Bath
• Spin-echo of a single electron spin in a quantum dot
• Stark Tuning of Donor Electron Spins in Silicon

Cited by in corpus (43)

• Scalable gate architecture for densely packed semiconductor spin qubits
• Strong Coupling of a Single Electron in Silicon to a Microwave Photon
• Rapid high-fidelity gate-based spin read-out in silicon
• Electrically controlling single spin qubits in a continuous microwave field
• Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking
• Excited states in bilayer graphene quantum dots
• Local optical control of the resonant dipole-dipole interaction between Rydberg atoms
• Quantum nondemolition measurement of an electron spin qubit
• Storing quantum information in spins and high-sensitivity ESR
• Site-selective quantum control in an isotopically enriched 28Si/SiGe quadruple quantum dot
• Proposal for detection of a single electron spin in a microwave resonator
• Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation
• Anisotropic Pauli spin blockade in hole quantum dots
• An electrically driven spin qubit based on valley mixing
• Hole spin resonance and spin-orbit coupling in a silicon metal-oxide-semiconductor field-effect transistor
• First-principles hyperfine tensors for electrons and holes in GaAs and silicon
• Crosstalk error correction through dynamical decoupling of single-qubit gates in capacitively coupled singlet-triplet semiconductor spin qubits
• A silicon-based single-electron interferometer coupled to a fermionic sea
• Microscopic models for charge-noise-induced dephasing of solid-state qubits
• SOI technology for quantum information processing
• Robust quantum gates for stochastic time-varying noise
• Fast high-fidelity entangling gates for spin qubits in Si double quantum dots
• Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction
• Highly tuneable hole quantum dots in Ge-Si core-shell nanowires
• Two-Qubit Pulse Gate for the Three-Electron Double Quantum Dot Qubit
• Passivation and characterization of charge defects in ambipolar silicon quantum dots
• A linear triple quantum dot system in isolated configuration
• Environmental noise effects on entanglement fidelity of exchange-coupled semiconductor spin qubits
• Si CMOS Platform for Quantum Information Processing
• All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology
• Fast pulse sequences for dynamically corrected gates in single-triplet qubits
• Validity of the single-particle description and charge noise resilience for multielectron quantum dots
• High Fidelity Singlet-Triplet $S$-$T_{-}$ Qubits in Inhomogeneous Magnetic Fields
• Optical orientation of electron spins and valence band spectroscopy in germanium
• Implementations of more general solid-state (SWAP)${}^{1/m}$ and controlled-(swap)${}^{1/m}$ gates
• Decoherence of two coupled singlet-triplet spin qubits
• Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots
• Reconfigurable quantum logic gates using Rashba controlled spin polarized currents
• A quantitative study of bias triangles presented in chemical potential space
• All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
• Bandwidth-limited and noisy pulse sequences for single qubit operations in semiconductor spin qubits
• Isotope engineering of silicon and diamond for quantum computing and sensing applications
• Localized all-optical control of single semiconductor quantum dots through plasmon-polariton-induced screening