Si CMOS Platform for Quantum Information Processing

Abstract

We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself.

References in corpus (10)

• Quantum Computation with Quantum Dots
• Spins in few-electron quantum dots
• An addressable quantum dot qubit with fault-tolerant control fidelity
• Universal dynamical decoupling of a single solid-state spin from a spin bath
• Spin-orbit qubit in a semiconductor nanowire
• Storing quantum information for 30 seconds in a nanoelectronic device
• Enhancing the Coherence of a Spin Qubit by Operating it as a Feedback Loop That Controls its Nuclear Spin Bath
• Electrical control over single hole spins in nanowire quantum dots
• Electrical control of g-factors in a few-hole silicon nanowire MOSFET
• Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor

Cited by in corpus (7)

• Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing
• Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing
• Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization
• All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology
• A Review on Quantum Computing: Qubits, Cryogenic Electronics and Cryogenic MOSFET Physics
• Gate reflectometry in dense quantum dot arrays
• All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology