Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization
arXiv:1903.06021 · doi:10.1109/TED.2018.2859636
Abstract
Extensive electrical characterization of ring oscillators (ROs) made in high- metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage (), static current (), and dynamic current () are analyzed for the case of the increase of threshold voltage () observed at low temperature. Then, the same analysis is performed by compensating to a constant, temperature independent value through forward body-biasing (FBB). Energy efficiency optimization is proposed for different supply voltages () in order to find an optimal operating point combining both high RO frequencies and low power dissipation. We show that the Energy-Delay product () can be significantly reduced at low temperature by applying a forward body bias voltage (). We demonstrate that outstanding performance of RO in terms of speed (=37ps) and static power (7nA/stage) can be achieved at 4.3K with reduced down to 0.325V.
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