177 citations · 376 across the 5 of their papers we have counts for
5 papers
Compact frequency multiplexed readout of silicon quantum dots in monolithic FDSOI 28nm technology
Quentin Schmidt, Baptiste Jadot, Brian Martinez +9
This paper demonstrates the first on-chip frequency multiplexed readout of two co-integrated single-electron transistors without the need for bulky resonators. We characterize sing…
Compact gate-based read-out of multiplexed quantum devices with a cryogenic CMOS active inductor
L. Le Guevel, G. Billiot, S. De Franceschi +4
In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing numbe…
Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization
H. Bohuslavskyi, S. Barraud, V. Barral +14
Extensive electrical characterization of ring oscillators (ROs) made in high- metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of…
Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening
H. Bohuslavskyi, A. G. M. Jansen, S. Barraud +13
In the standard MOSFET description of the drain current as a function of applied gate voltage , the subthreshold swing has a funda…
Electronic spectrum of twisted graphene layers under heterostrain
L. Huder, A. Artaud, T. Le Quang +5
We demonstrate that stacking layered materials allows a novel type of strain engineering where each layer is strained independently, which we call heterostrain. We combine detailed…