activity
20182020
most citedCryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening

151 citations · 305 across the 8 of their papers we have counts for

collaborators

11 papers

cond-mat.mes-hall2020

Single-electron control in a foundry-fabricated two-dimensional qubit array

Fabio Ansaloni, Anasua Chatterjee, Heorhii Bohuslavskyi +4

Silicon spin qubits have achieved high-fidelity one- and two-qubit gates, above error correction thresholds, promising an industrial route to fault-tolerant quantum computation. A…

cond-mat.mes-hall201919 cited

All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Léo Bourdet, Louis Hutin, Benoit Bertrand +14

We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field…

cond-mat.mes-hall20194 cited

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

L. Hutin, B. Bertrand, E. Chanrion +20

We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor…

cond-mat.mes-hall201930 cited

Towards scalable silicon quantum computing

M. Vinet, L. Hutin, B. Bertrand +20

We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a…

cond-mat.mes-hall20197 cited

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

L. Hutin, L. Bourdet, B. Bertrand +14

We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMO…

cond-mat.mes-hall201922 cited

Si CMOS Platform for Quantum Information Processing

L. Hutin, R. Maurand, D. Kotekar-Patil +7

We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact tw…