615 citations · 1.6k across the 21 of their papers we have counts for
21 papers
Fast time-domain current measurement for quantum dot charge sensing using a homemade cryogenic transimpedance amplifier
Heorhii Bohuslavskyi, Masayuki Hashisaka, Takase Shimizu +3
We developed a high-speed and low-noise time-domain current measurement scheme using a homemade GaAs high-electron-mobility-transistor-based cryogenic transimpedance amplifier (TIA…
Scalable on-chip multiplexing of silicon single and double quantum dots
Heorhii Bohuslavskyi, Alberto Ronzani, Joel Hätinen +5
Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most pro…
Autonomous estimation of high-dimensional Coulomb diamonds from sparse measurements
Anasua Chatterjee, Fabio Ansaloni, Torbjørn Rasmussen +5
Quantum dot arrays possess ground states governed by Coulomb energies, utilized prominently by singly occupied quantum dots, each implementing a spin qubit. For such quantum proces…
Gate reflectometry in dense quantum dot arrays
Fabio Ansaloni, Heorhii Bohuslavskyi, Federico Fedele +12
Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the…
Single-electron control in a foundry-fabricated two-dimensional qubit array
Fabio Ansaloni, Anasua Chatterjee, Heorhii Bohuslavskyi +4
Silicon spin qubits have achieved high-fidelity one- and two-qubit gates, above error correction thresholds, promising an industrial route to fault-tolerant quantum computation. A…
28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing
H. Bohuslavskyi, S. Barraud, M. Cassé +8
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room…
All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology
Léo Bourdet, Louis Hutin, Benoit Bertrand +14
We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field…
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
L. Hutin, B. Bertrand, E. Chanrion +20
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor…
Towards scalable silicon quantum computing
M. Vinet, L. Hutin, B. Bertrand +20
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a…
All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
L. Hutin, L. Bourdet, B. Bertrand +14
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMO…
Si CMOS Platform for Quantum Information Processing
L. Hutin, R. Maurand, D. Kotekar-Patil +7
We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact tw…
SOI technology for quantum information processing
S. De Franceschi, L. Hutin, R. Maurand +9
We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an…
Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization
H. Bohuslavskyi, S. Barraud, V. Barral +14
Extensive electrical characterization of ring oscillators (ROs) made in high- metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of…
Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening
H. Bohuslavskyi, A. G. M. Jansen, S. Barraud +13
In the standard MOSFET description of the drain current as a function of applied gate voltage , the subthreshold swing has a funda…
Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures
Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi +3
This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic phenomena…
Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing
Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi +3
In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and…
Electrical spin driving by -matrix modulation in spin-orbit qubits
Alessandro Crippa, Romain Maurand, Léo Bourdet +11
In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opport…
Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
Andrea Corna, Léo Bourdet, Romain Maurand +11
The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A n…
Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry
Alessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil +10
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry se…
Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction
Heorhii Bohuslavskyi, Dharmraj Kotekar-Patil, Romain Maurand +9
We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to…
A CMOS silicon spin qubit
R. Maurand, X. Jehl, D. Kotekar Patil +8
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complem…