Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry

Abstract

We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive response, we obtain the complete charge stability diagram of the device. Charge transitions between the two quantum dots and between each quantum dot and either the source or the drain contact are detected through phase shifts in the reflected radio-frequency signals. At finite bias, reflectometry allows probing charge transitions to excited quantum-dot states thereby enabling direct access to the energy level spectra of the quantum dots. Interestingly, we find that in the presence of charge transport across the two dots the reflectometry signatures of interdot transitions display a dip-peak structure containing quantitative information on the charge relaxation rates in the double quantum dot.

arXiv comment7 pages, 4 figures

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• Probing quantum devices with radio-frequency reflectometry
• Radio-frequency capacitive gate-based sensing
• Deep Reinforcement Learning for Efficient Measurement of Quantum Devices
• Radio-frequency reflectometry of a quantum dot using an ultra-low-noise SQUID amplifier
• Dispersive sensing in hybrid InAs/Al nanowires
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• Theory of multi-dimensional quantum capacitance and its application to spin and charge discrimination in quantum-dot arrays
• Charge susceptibility and conductances of a double quantum dot
• Few-electrode design for silicon MOS quantum dots