Valley blockade and multielectron spin-valley Kondo effect in silicon

Abstract

We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the valley blockade regime, the manifestation of Kondo effect obeys to the periodicity 4 of the electron filling sequence typical of silicon emerging at occupation N=1, 2, 3. The spin-valley Kondo effect emerges under different kinds of screening depending on the electron filling. By exploiting the valley blockade regime, valley index conservation in the Kondo SU(4) is deduced without the employment of an external magnetic field. Microwave irradiation suppresses the Kondo effect at occupancies up to three electrons.

Paper structure reorganized with respect to v1. 14 pages, 16 figures

References in corpus (6)

• Orbital Kondo effect in carbon nanotubes
• Transport spectroscopy of a single dopant in a gated silicon nanowire
• Valley-spin blockade and spin resonance in carbon nanotubes
• Kondo Effects in Carbon Nanotubes: From SU(4) to SU(2) symmetry
• Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy
• Microwave Irradiation Effects on Random Telegraph Signal in a MOSFET

Cited by in corpus (6)

• Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry
• Impact of valley phase and splitting on readout of silicon spin qubits
• Blocking transport resonances via Kondo entanglement in quantum dots
• Reconfigurable quadruple quantum dots in a silicon nanowire transistor
• Inelastic Cotunneling Resonances in the Coulomb-Blockade Transport in Donor-Atom Transistors
• Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS transistor by RMS noise analysis