71 citations · 181 across the 6 of their papers we have counts for
6 papers
RF simulation platform of qubit control using FDSOI technology for quantum computing
H. Jacquinot, R. Maurand, G. Troncoso Fernandez Bada +6
In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line charac…
28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing
H. Bohuslavskyi, S. Barraud, M. Cassé +8
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room…
Valley blockade and multielectron spin-valley Kondo effect in silicon
A. Crippa, M. L. V. Tagliaferri, D. Rotta +6
We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunn…
Control of the ionization state of 3 single donor atoms in silicon
Benoit Voisin, Manuel Cobian, Xavier Jehl +4
By varying the gate and substrate voltage in a short silicon-on-insulator trigate field effect transistor we control the ionization state of three arsenic donors. We obtain a good…
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves +9
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain curren…
Individual charge traps in silicon nanowires: Measurements of location, spin and occupation number by Coulomb blockade spectroscopy
M. Hofheinz, X. Jehl, M. Sanquer +3
We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in…