Individual charge traps in silicon nanowires: Measurements of location, spin and occupation number by Coulomb blockade spectroscopy

Abstract

We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in the device. A simple model reproduces these anomalies accurately and we show how the capacitance matrices of the traps can be obtained from the shape of the anomalies. From these capacitance matrices we deduce that the traps are located near or inside the wire. Based on the occurrence of the anomalies in wires with different doping levels we infer that most of the traps are arsenic dopant states. In some cases the anomalies are accompanied by a random telegraph signal which allows time resolved monitoring of the occupation of the trap. The spin of the trap states is determined via the Zeeman shift.

9 pages, 8 figures, v2: section on RTS measurements added, many improvements

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• Passivation and characterization of charge defects in ambipolar silicon quantum dots
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• Defect detection in nano-scale transistors based on radio-frequency reflectometry
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• Extracting inter-dot tunnel couplings between few donor quantum dots in silicon
• A proposed spin qubit CNOT gate robust against noisy coupling
• Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots
• Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire
• Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors
• Determining the parameters of a random telegraph signal by digital low pass filtering
• Strongly correlated charge transport in silicon MOSFET quantum dots
• A comprehensive study of out-of-equilibrium Kondo effect and Coulomb blockade