Observing sub-microsecond telegraph noise with the radio frequency single electron transistor

Abstract

Telegraph noise, which originates from the switching of charge between meta-stable trapping sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to decoherence and loss of read out fidelity. Here we use a radio frequency single electron transistor (rf-SET) to probe the telegraph noise present in a typical semiconductor-based quantum computer architecture. We frequently observe micro-second telegraph noise, which is a strong function of the local electrostatic potential defined by surface gate biases. We present a method for studying telegraph noise using the rf-SET and show results for a charge trap in which the capture and emission of a single electron is controlled by the bias applied to a surface gate.

Accepted for publication in Journal of Applied Physics. Comments always welcome, email [email protected], [email protected]

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• Qubit systems subject to unbalanced random telegraph noise: quantum correlations, non-Markovianity and teleportation
• Measuring the Temperature of a Mesoscopic Quantum Electron System by means of Single Electron Statistics
• Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors
• Determining the parameters of a random telegraph signal by digital low pass filtering
• Direct measurement of the maximum tunnel rate in a radio frequency single electron transistor operated as a microwave mixer