Electric-field-dependent spectroscopy of charge motion using a single-electron transistor

Abstract

We present observations of background charge fluctuators near an Al-AlO_x-Al single-electron transistor on an oxidized Si substrate. The transistor design incorporates a heavily doped substrate and top gate, which allow for independent control of the substrate and transistor island potentials. Through controlled charging of the Si/SiO_2 interface we show that the fluctuators cannot reside in the Si layer or in the tunnel barriers. Combined with the large measured signal amplitude, this implies that the defects must be located very near the oxide surface.

4 pages, 4 figures; typos corrected, minor clarifications added; published in APL

References in corpus (4)

• Single Spin Measurement using Single Electron Transistors to Probe Two Electron Systems
• Noise in Al single electron transistors of stacked design
• Observing sub-microsecond telegraph noise with the radio frequency single electron transistor
• Electrometry on charge traps with a single-electron transistor

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• Charge Offset Stability in Si Single Electron Devices with Al Gates
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• Quantum control and manipulation of donor electrons in Si-based quantum computing
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• Single electron spin and its coherence in Si quantum computer architecture
• Magnetic field-assisted manipulation and entanglement of Si spin qubits
• Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors
• Coulomb blockade in a Si channel gated by an Al single-electron transistor