Thermal properties of charge noise sources
arXiv:1202.5350 · doi:10.1103/PhysRevB.88.245410
Abstract
Measurements of the temperature and bias dependence of Single Electron Transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature, and that its low temperature saturation is due to SET self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with the electrons in the SET, which can be at a much higher temperature than the substrate. We suggest that the noise is caused by electrons tunneling between the SET metal and nearby potential wells.
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- Aharonov-Bohm interference as a probe of Majorana fermions
- Correlated transport through junction arrays in the small Josephson energy limit: incoherent Cooper-pairs and hot electrons
- Microscopic charged fluctuators as a limit to the coherence of disordered superconductor devices
- Observation of discrete charge states of a coherent two-level system in a superconducting qubit
- Characterisation of spatial charge sensitivity in a multi-mode superconducting qubit
- Qubit decoherence under two-axis coupling to low-frequency noises