Measurement of the shot noise in a single electron transistor

Abstract

We have systematically measured the shot noise in a single electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.

4 figures

References in corpus (4)

• Shot Noise Detection on a Carbon Nanotube Quantum Dot
• Shot noise in self-assembled InAs quantum dots
• Shot noise in tunneling through a single quantum dot
• Current and noise expressions for radio-frequency single-electron transistors

Cited by in corpus (10)

• Single-electron current sources: towards a refined definition of ampere
• Dynamical Coulomb Blockade of Shot Noise
• Microwave quantum optics and electron transport through a metallic dot strongly coupled to a transmission line cavity
• Time-dependent Landauer-Büttiker approach to charge pumping in AC-driven graphene nanoribbons
• Thermal properties of charge noise sources
• Measuring carbon nanotube vibrations using a single-electron transistor as a fast linear amplifier
• Finite frequency backscattering current noise at a helical edge
• Giant current fluctuations in an overheated single electron transistor
• Intrinsic Noise of the Single Electron Box
• Current fluctuations of noncollinear single-electron spin-valve transistors