Charge sensitivity of radio frequency single-electron transistor (RF-SET)

Abstract

A theoretical analysis of the charge sensitivity of the RF-SET is presented. We use the ``orthodox'' approach and consider the case when the carrier frequency is much less than $I/e$ where $I$ is the typical current through RF-SET. The optimized noise-limited sensitivity is determined by the temperature $T$, and at low $T$ it is only 1.4 times less than the sensitivity of conventional single-electron transistor.

3 pages, 4 figures

References in corpus (5)

• Zero Frequency Current Noise for the Double Tunnel Junction Coulomb Blockade
• Noise in Al single electron transistors of stacked design
• Charge Sensitivity of Superconducting Single-Electron Transistor
• Resonant tunneling through a macroscopic charge state in a superconducting SET transistor
• Quasi-Langevin method for shot noise calculation in single-electron tunneling

Cited by in corpus (24)

• Introduction to Quantum Noise, Measurement and Amplification
• Single-electron current sources: towards a refined definition of ampere
• Fast sensing of double-dot charge arrangement and spin state with an rf sensor quantum dot
• A high-sensitivity gate-based charge sensor in silicon
• Probing quantum devices with radio-frequency reflectometry
• Sensitivity of a micromechanical displacement detector based on the radio-frequency single-electron transistor
• Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique
• An ultra sensitive radio frequency single electron transistor working up to 4.2 K
• Spin Readout and Initialization in a Semiconductor Quantum Dot
• Impedance of the single electron transistor at radio-frequencies
• Intrinsic noise of a micro-mechanical displacement detector based on the radio-frequency single-electron transistor
• Measurement of the shot noise in a single electron transistor
• Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor
• Tunneling statistics for analysis of spin-readout fidelity
• Analysis of the radio-frequency single-electron transistor with large quality factor
• Sensitivity and Linearity of Superconducting Radio-Frequency Single-Electron Transistors: Effects of Quantum Charge Fluctuations
• On-Chip Matching Networks for Radio-Frequency Single-Electron-Transistors
• Numerical analysis of the radio-frequency single-electron transistor operation
• A circuit analysis of an in situ tunable radio-frequency quantum point contact
• Charge sensitivity of the Inductive Single-Electron Transistor
• Radio-frequency operation of a double-island single-electron transistor
• Cyclostationary shot noise in mesoscopic measurements
• Intrinsic Noise of the Single Electron Box
• 4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot