An ultra sensitive radio frequency single electron transistor working up to 4.2 K

Abstract

We present the fabrication and measurement of a radio frequency single electron transistor (rf-SET), that displays a very high charge sensitivity of 1.9 microlectrons/sqrt(Hz) at 4.2 K. At 40 mK, the charge sensitivity is 0.9 and 1.0 microlectrons/sqrt(Hz) in the superconducting and normal state respectively. The sensitivity was measured as a function of radio frequency amplitude at three different temperatures: 40 mK, 1.8 K and 4.2 K.

arXiv comment13 pages, 4 figures

References in corpus (5)

• Current measurement by real-time counting of single electrons
• Coherent dynamics of a Josephson charge qubit
• Charge sensitivity of radio frequency single-electron transistor (RF-SET)
• Coulomb charging energy for arbitrary tunneling strength
• Analysis of the radio-frequency single-electron transistor with large quality factor

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