Resonant tunnelling features in the transport spectroscopy of quantum dots

Abstract

We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects, with a focus on the most common operating conditions. We describe several phenomena that can lead to apparently identical signatures in a bias spectroscopy measurement, with the aim of providing experimental methods to distinguish between their different physical origins. The correct classification of the resonant tunnelling features is an essential requirement to understand the details of the confining potential or predict the performance of the dot for quantum information processing.

18 pages, 7 figures. Short review article submitted to Nanotechnology, special issue on 'Quantum Science and Technology at the Nanoscale'

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Cited by in corpus (8)

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• Experiments on thermoelectric properties of quantum dots
• Quantum state readout of individual quantum dots by electrostatic force detection
• Large even-odd spacing and $g$-factor anisotropy in PbTe quantum dots
• Spin-valley locking for in-gap quantum dots in a MoS2 transistor
• Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon
• 0D-2D Heterostructure for making very Large Quantum Registers using itinerant Bose-Einstein Condensate of Excitons
• Electron Phase Detection in Single Molecules by Interferometry