Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling

Abstract

A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a small difference in the phase of the valley-orbit coupling between the two dots, and it in turn allows controllable rotations of two-dot valley eigenstates at a level anticrossing. We present a comprehensive analytical discussion of this process, with estimates for realistic structures.

10 pages, 2 figures

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Cited by in corpus (16)

• Silicon Quantum Electronics
• Three-electron spin qubits
• Universal Quantum Computing with Spin and Valley
• Hybrid spin and valley quantum computing with singlet-triplet qubits
• Control of valley dynamics in silicon quantum dots in the presence of an interface step
• A quadrupolar exchange-only spin qubit
• Electromagnetic control of valley splitting in ideal and disordered Si quantum dots
• Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot
• Switching between relaxation hotspots and coldspots in disordered spin qubits
• Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit
• Impact of valley phase and splitting on readout of silicon spin qubits
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• Valley Phase and Voltage Control of Coherent Manipulation in Si Quantum Dots
• Coulomb interaction and valley-orbit coupling in Si quantum dots
• Current hot spot in the spin-valley blockade in carbon nanotubes
• Fast spin-valley-based quantum gates in Si with micromagnets