Electric field driven donor-based charge qubits in semiconductors

Abstract

We investigate theoretically donor-based charge qubit operation driven by external electric fields. The basic physics of the problem is presented by considering a single electron bound to a shallow-donor pair in GaAs: This system is closely related to the homopolar molecular ion H_2^+. In the case of Si, heteropolar configurations such as PSb^+ pairs are also considered. For both homopolar and heteropolar pairs, the multivalley conduction band structure of Si leads to short-period oscillations of the tunnel-coupling strength as a function of the inter-donor relative position. However, for any fixed donor configuration, the response of the bound electron to a uniform electric field in Si is qualitatively very similar to the GaAs case, with no valley quantum interference-related effects, leading to the conclusion that electric field driven coherent manipulation of donor-based charge qubits is feasible in semiconductors.

References in corpus (3)

• Manipulation of a single charge in a double quantum dot
• Charge-qubit operation of an isolated double quantum dot
• Charge qubits in semiconductor quantum computer architectures: Tunnel coupling and decoherence

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• A theoretical investigation into the microwave spectroscopy of a phosphorus-donor charge-qubit in silicon: Coherent control in the Si:P quantum computer architecture
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• Robustness of Charge-Qubit Cluster States to Double Quantum Point Contact Measurement
• Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon
• Phonon-induced entanglement dynamics of two donor-based charge quantum bits