Gate-induced ionization of single dopant atoms

Abstract

Gate-induced wave function manipulation of a single dopant atom is a possible basis of atomic scale electronics. From this perspective, we analyzed the effect of a small nearby gate on a single dopant atom in a semiconductor up to field ionization. The dopant is modelled as a hydrogen-like impurity and the Schrodinger equation is solved by a variational method. We find that--depending on the separation of the dopant and the gate--the electron transfer is either gradual or abrupt, defining two distinctive regimes for the gate-induced ionization process.

5 pages, 3 EPS-figures. To be published in Phys. Rev. B

References in corpus (5)

• Exchange in silicon-based quantum computer architecture
• Hydrogenic Spin Quantum Computing in Silicon: A Digital Approach
• Silicon-based Quantum Computation
• Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces
• Nuclear magnetic resonance spectrum of 31P donors in silicon quantum computer

Cited by in corpus (18)

• Silicon Quantum Electronics
• High precision quantum control of single donor spins in silicon
• Quantum control of donor electrons at the Si-SiO2 interface
• Electric Field Control of Shallow Donor Impurities in Silicon
• Theory of the Stark Effect for P donors in Si
• Orbital Stark effect and quantum confinement transition of donors in silicon
• Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition
• Electric field driven donor-based charge qubits in semiconductors
• Single-qubit operations in the double-donor structure driven by optical and voltage pulses
• Single-qubit operations in the double-donor structure driven by strongly detuned optical pulses
• Molecular orbital calculations of two-electron states for P donor solid-state spin qubits
• Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors
• Mapping donor electron wave function deformations at sub-Bohr orbit resolution
• Simulation of Si:P spin-based quantum computer architecture
• Effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture
• Cross-talk compensation of hyperfine control in donor qubit architectures
• Quantum information processing based on P-31 nuclear spin qubits in a quasi-one-dimensional Si-28 nanowire
• Large Stark Effect for Li Donor Spins in Si