Simulation of Si:P spin-based quantum computer architecture

Abstract

We present a systematic and realistic simulation for single and double phosphorous donors in a silicon-based quantum computer design. A two-valley equation is developed to describe the ground state of phosphorous donors in strained silicon quantum well (QW), with the central cell effect treated by a model impurity potential. We find that the increase of quantum well confinement leads to shrinking charge distribution in all 3 dimensions. Using an unrestricted Hartree-Fock method with Generalized Valence Bond (GVB) single-particle wave functions, we are able to solve the two-electron Sch$\ddot{o}$dinger equation with quantum well confinement and realistic gate potentials. The effects of QW width, gate voltages, donor separation, and donor position are calculated and analyzed. The gate tunability and gate fidelity are defined and evaluated, for a typical QC design. Estimates are obtained for the duration of $\sqrt{SWAP}$ gate operation and the required accuracy in voltage control. A strong exchange oscillation is observed as both donors are shifted along [001] axis but with their separation unchanged. Applying a gate potential tends to suppress the oscillation. The exchange oscillation as a function of donor position along [100] axis is found to be completely suppressed as the donor separation is decreased. The simulation presented in this paper is of importance to the practical design of an exchange-based silicon quantum computer.

arXiv comment37 pages, 10 figures

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Cited by in corpus (5)

• Silicon Quantum Electronics
• Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: pseudopotential vs. effective mass calculation
• Molecular orbital calculations of two-electron states for P donor solid-state spin qubits
• Exchange between deep donors in semiconductors: a quantum defect approach
• Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices