20 citations · 38 across the 4 of their papers we have counts for
4 papers
Simulation of Si:P spin-based quantum computer architecture
Angbo Fang, Yia-Chung Chang, J. R. Tucker
We present a systematic and realistic simulation for single and double phosphorous donors in a silicon-based quantum computer design. A two-valley equation is developed to describe…
The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(001)
J. C. Kim, J. -Y. Ji, J. S. Kline +2
The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scann…
Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing
J. C. Kim, J. -Y. Ji, J. S. Kline +2
Si(100) surfaces were prepared by wet-chemical etching followed by 0.3-1.5keV Ar ion sputtering, either at elevated or room temperature. After a brief anneal under ultrahigh vacuum…
Weak Localization in an Ultradense 2D Electron Gas in -doped Silicon
M. A. Zudov, C. L. Yang, R. R. Du +4
An ultradense 2D electron system can be realized by adsorbing PH precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling th…