Theory of the Stark Effect for P donors in Si

Abstract

We develop a multi-valley effective mass theory for substitutional donors in silicon in an inhomogeneous environment. Valley-orbit coupling is treated perturbatively. We apply the theory to the Stark effect in Si:P. The method becomes more accurate at high fields, and it is designed to give correct experimental binding energies at zero field. Unexpectedly, the ground state energy for the donor electron is found to increase with electric field as a consequence of spectrum narrowing of the 1s manifold. Our results are of particular importance for the Kane quantum computer.

published version

References in corpus (4)

• Valley splitting in strained silicon quantum wells
• Electric Field Control of Shallow Donor Impurities in Silicon
• Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces
• Gate-induced ionization of single dopant atoms

Cited by in corpus (32)

• Silicon Quantum Electronics
• Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
• Transport spectroscopy of a single dopant in a gated silicon nanowire
• Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells
• High precision quantum control of single donor spins in silicon
• Magnetic field dependence of valley splitting in realistic Si/SiGe quantum wells
• Quantum control of donor electrons at the Si-SiO2 interface
• Stark Tuning of Donor Electron Spins in Silicon
• Phonitons as a sound-based analogue of cavity quantum electrodynamics
• Multivalley effective mass theory simulation of donors in silicon
• Resonant tunnelling features in the transport spectroscopy of quantum dots
• Orbital Stark effect and quantum confinement transition of donors in silicon
• Hyperfine Stark effect of shallow donors in silicon
• Addressable electron spin resonance using donors and donor molecules in silicon
• Conditional control of donor nuclear spins in silicon using Stark shifts
• Effective mass theory of monolayer δ-doping in the high-density limit
• Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon
• Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory
• Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon
• Multi-valley envelope function equations and effective potentials for P impurity in silicon
• Suppressing spin relaxation in silicon
• Electronic properties of delta-doped phosphorus layers in silicon and germanium
• A theoretical investigation into the microwave spectroscopy of a phosphorus-donor charge-qubit in silicon: Coherent control in the Si:P quantum computer architecture
• Simulation of Si:P spin-based quantum computer architecture
• Multiscale theory of valley splitting
• Theory of single and two-qubit operations with donor-bound electron spins in germanium
• Optical Control of Donor Spin Qubits in Silicon
• Cross-talk compensation of hyperfine control in donor qubit architectures
• Quadrupole Shift of Nuclear Magnetic Resonance of Donors in Silicon at Low Magnetic Field
• Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
• Intervalley splittings of Si quantum wells
• Large Stark Effect for Li Donor Spins in Si