High precision quantum control of single donor spins in silicon

Abstract

The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Minima Basis approaches and compared to the recent precision measurements. The TB electronic structure calculations included over 3 million atoms. In contrast to previous effective mass based results, the quadratic Stark coefficient obtained from both theories agrees closely with the experiments. This work represents the most sensitive and precise comparison between theory and experiment for single donor spin control. It is also shown that there is a significant linear Stark effect for an impurity near the interface, whereas, far from the interface, the quadratic Stark effect dominates. Such precise control of single donor spin states is required particularly in quantum computing applications of single donor electronics, which forms the driving motivation of this work.

5 pages, 2 figures

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Cited by in corpus (49)

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• Two-Electron Spin Correlations in Precision Placed Donors in Silicon
• Multivalley effective mass theory simulation of donors in silicon
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• Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision
• Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors
• Moving towards nano-TCAD through multimillion atom quantum dot simulations matching experimental data
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• Experimental and Atomistic Theoretical Study of Degree of Polarization from Multi-layer InAs/GaAs Quantum Dots
• Addressable electron spin resonance using donors and donor molecules in silicon
• Coherent electron transport by adiabatic passage in an imperfect donor chain
• Conditional control of donor nuclear spins in silicon using Stark shifts
• Engineered valley-orbit splittings in quantum confined nanostructures in silicon
• Spin-lattice relaxation times of single donors and donor clusters in silicon
• On the Bandstructure Velocity and Ballistic Current of Ultra Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation and Bias
• Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations
• Atomistic simulations of adiabatic coherent electron transport in triple donor systems
• Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
• Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon
• Two-electron states of a group V donor in silicon from atomistic full configuration interaction
• A many-electron tight binding method for the analysis of quantum dot systems
• Stark shift and field ionization of arsenic donors in ${}^{28}$Si-SOI structures
• Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
• Spatially resolved resonant tunneling on single atoms in silicon
• Interface-induced heavy-hole/light-hole splitting of acceptors in silicon
• Single-shot readout of multiple donor electron spins with a gate-based sensor
• Mapping donor electron wave function deformations at sub-Bohr orbit resolution
• Electronic properties of delta-doped phosphorus layers in silicon and germanium
• Feasibility, Accuracy and Performance of Contact Block Reduction method for multi-band simulations of ballistic quantum transport
• Large-scale atomistic density functional theory calculations of phosphorus-doped silicon quantum bits
• Bandstructure and mobility variations in p-type Silicon nanowires under electrostatic gate field
• Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon
• Subband engineering for p-type silicon ultra-thin layers for increased carrier velocities: An atomistic analysis
• Quadrupole Shift of Nuclear Magnetic Resonance of Donors in Silicon at Low Magnetic Field
• Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
• General off-resonance error robust symmetric composite pulses with three elementary operations
• Excited states of defect lines in silicon: A first-principles study based on hydrogen cluster analogues
• Large Stark Effect for Li Donor Spins in Si
• A Computational Workflow for Designing Silicon Donor Qubits
• Characterizing Si:P quantum dot qubits with spin resonance techniques
• Electron readout contrast enhancement in the parallel nuclear regime of an exchange-coupled donor spin qubit system