activity
19962023
most citedSilicon Quantum Electronics

1.2k citations · 3k across the 33 of their papers we have counts for

collaborators

33 papers

cond-mat.mtrl-sci2023★ 6 cited

Stray magnetic field imaging of thin exfoliated iron halides flakes

Fernando Meneses, Rongrong Qi, Alexander J. Healey +8

Magnetic van der Waals materials are often proposed for use in future spintronic devices, aiming to leverage the combination of long-range magnetic order and near-atomic thinness t…

cond-mat.mes-hall2022★ 16 cited

Varied magnetic phases in a van der Waals easy-plane antiferromagnet revealed by nitrogen-vacancy center microscopy

A. J. Healey, S. Rahman, S. C. Scholten +7

Interest in van der Waals materials often stems from a desire to miniaturise existing technologies by exploiting their intrinsic layered structure to create near atomically-thin co…

cond-mat.mes-hall2021

Valley population of donor states in highly strained silicon

B. Voisin, K. S. H. Ng, J. Salfi +13

Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valle…

cond-mat.mes-hall2021★ 31 cited

Valley interference and spin exchange at the atomic scale in silicon

B. Voisin, J. Bocquel, A. Tankasala +6

Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silico…

cond-mat.mtrl-sci2020★ 7 cited

Long-Range Surface-Assisted Molecule-Molecule Hybridization

Marina Castelli, Jack Hellerstedt, Cornelius Krull +4

Metalated phthalocyanines (Pc's) are robust and versatile molecular complexes, whose properties can be tuned by changing their functional groups and central metal atom. The electro…

cond-mat.mtrl-sci2017★ 7 cited

Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon

M. Usman, B. Voisin, J. Salfi +2

Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical metho…