Engineering inter-qubit exchange coupling between donor bound electrons in silicon

Abstract

We investigate the electrical control of the exchange coupling (J) between donor bound electrons in silicon with a detuning gate bias, crucial for the implementation of the two-qubit gate in a silicon quantum computer. We find the asymmetric 2P-1P system provides a highly tunable exchange-curve with mitigated J-oscillation, in which 5 orders of magnitude change in the exchange energy can be achieved using a modest range of electric field for 15 nm qubit separation. Compared to the barrier gate control of exchange in the Kane qubit, the detuning gate design reduces the demanding constraints of precise donor separation, gate width, density and location, as a range of J spanning over a few orders of magnitude can be engineered for various donor separations. We have combined a large-scale full band atomistic tight-binding method with a full configuration interaction technique to capture the full two-electron spectrum of gated donors, providing state-of-the-art calculations of exchange energy in 1P-1P and 2P-1P qubits.

References in corpus (4)

• Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
• Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
• Electrically controlling single spin qubits in a continuous microwave field
• Spin-lattice relaxation times of single donors and donor clusters in silicon

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