Voltage Control of Exchange Coupling in Phosphorus Doped Silicon

Abstract

Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes. These voltage biases create electro-static fields within the crystal substrate, perturbing the states of the donor electrons and thus altering the strength of the exchange interaction between them. We find that control gates of this kind can be used to either enhance, or reduce the strength of the interaction, by an amount that depends both on the magnitude and orientation of the donor separation.

5 Pages, 5 Figures

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Cited by in corpus (12)

• Silicon Quantum Electronics
• Global control and fast solid-state donor electron spin quantum computing
• Two-Electron Spin Correlations in Precision Placed Donors in Silicon
• Robust CNOT gates from almost any interaction
• Engineering inter-qubit exchange coupling between donor bound electrons in silicon
• A precise CNOT gate in the presence of large fabrication induced variations of the exchange interaction strength
• Molecular orbital calculations of two-electron states for P donor solid-state spin qubits
• Towards Large-Scale Quantum Computation
• Factorization in XYZ spin systems under general fields and separable ground state engineering
• Large-scale atomistic density functional theory calculations of phosphorus-doped silicon quantum bits
• Cross-talk compensation of hyperfine control in donor qubit architectures
• Exchange between deep donors in semiconductors: a quantum defect approach