1 citations · 1 across the 1 of their papers we have counts for
6 papers
A microwave transducer for a nano mechnical resonator
G. J. Milburn, C. A. Holmes, L. M. Kettle +1
We give a quantum master equation description of the measurement scheme based on a coplanar microwave cavity capacitively coupled to nano mechanical resonator. The system exhibits…
Molecular orbital calculations of two-electron states for P donor solid-state spin qubits
L. M. Kettle, Hsi-Sheng Goan, Sean C. Smith
We theoretically study the Hilbert space structure of two neighbouring P donor electrons in silicon-based quantum computer architectures. To use electron spins as qubits, a crucial…
Voltage Control of Exchange Coupling in Phosphorus Doped Silicon
C. J. Wellard, L. C. L Hollenberg, L. M. Kettle +1
Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the ap…
Effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture
L. M. Kettle, H. -S. Goan, Sean C. Smith +2
We calculate the electron exchange coupling for a phosphorus donor pair in silicon perturbed by a J-gate potential and the boundary effects of the silicon host geometry. In additio…
Electron Exchange Coupling for Single Donor Solid-State Qubits
C. J. Wellard, L. C. L. Hollenberg, F. Parisoli +4
Inter-valley interference between degenerate conduction band minima has been shown to lead to oscillations in the exchange energy between neighbouring phosphorus donor electron sta…
Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces
L. M. Kettle, H. S. Goan, Sean C. Smith +3
In this paper we examine the effects of varying several experimental parameters in the Kane quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide b…