Effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture
arXiv:cond-mat/0402183 · doi:10.1088/0953-8984/16/7/001
Abstract
We calculate the electron exchange coupling for a phosphorus donor pair in silicon perturbed by a J-gate potential and the boundary effects of the silicon host geometry. In addition to the electron-electron exchange interaction we also calculate the contact hyperfine interaction between the donor nucleus and electron as a function of the varying experimental conditions. Donor separation, depth of the P nuclei below the silicon oxide layer and J-gate voltage become decisive factors in determining the strength of both the exchange coupling and the hyperfine interaction - both crucial components for qubit operations in the Kane quantum computer. These calculations were performed using an anisotropic effective-mass Hamiltonian approach. The behaviour of the donor exchange coupling as a function of the device parameters varied provides relevant information for the experimental design of these devices.
arXiv comment15 pages, 15 figures. Accepted for Journal of Physics: Condensed Matter
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- Silicon Quantum Electronics
- Global control and fast solid-state donor electron spin quantum computing
- Molecular orbital calculations of two-electron states for P donor solid-state spin qubits
- Towards Large-Scale Quantum Computation
- Large-scale atomistic density functional theory calculations of phosphorus-doped silicon quantum bits
- Cross-talk compensation of hyperfine control in donor qubit architectures