169 citations · 755 across the 12 of their papers we have counts for
13 papers
Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures
Dirk König, Michael Frentzen, Daniel Hiller +9
The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscal…
Electronic Structure Shift of Deep Nanoscale Silicon by SiO- vs. SiN-Embedding as Alternative to Impurity Doping
Dirk König, Noël Wilck, Daniel Hiller +7
Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on…
Extraordinary water adsorption characteristics of graphene oxide
B. Lian, S. De Luca, Y. You +6
The laminated structure of graphene oxide (GO) confers unique interactions with water molecules which may be utilised in a range of applications that require materials with tuneabl…
Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
Dirk König, Daniel Hiller, Sebastian Gutsch +2
All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omniprese…
On the mechanism of gas adsorption for pristine, defective and functionalized graphene
Y. You, J. Deng, X. Tan +5
Defect is no longer deemed an adverse aspect of graphene. Contrarily, it can pave ways of extending applicability of graphene. Here, we discuss the effects of three types of defect…
Tetragonal Bismuth Bilayer: A Stable and Robust Quantum Spin Hall Insulator
Liangzhi Kou, Xin Tan, Yandong Ma +6
Topological insulators (TIs) exhibit novel physics with great promise for new devices, but considerable challenges remain to identify TIs with high structural stability and large n…